Mitsubishi CM100DU-12F-300G New Stock

Mitsubishi CM100DU-12F-300G New Stock
Mitsubishi CM100DU-12F-300G New Stock
Mitsubishi CM100DU-12F-300G New Stock
Mitsubishi CM100DU-12F-300G New Stock

CM100DU-12F-300G Video

Sell CM100DU-12F-300G, #Mitsubishi #CM100DU-12F-300G New Stock, CM100DU-12F-300G Module Transistor N Channel 100 A 600 V 350 W 600 V Module;, #IGBT_Module, #IGBT, #CM100DU_12F_300G


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Mitsubishi CM100DU-12F-300G is a power module designed for use in high-power industrial applications. It consists two insulated gate bipolar transistor (IGBT) modules in a half-bridge configuration, each rated for 600V & 100A. The module includes integrated gate driver circuit and over-current and over-temperature protection.

CM100DU-12F-300G designed for high reliability & performance, for use in motor drives, inverters, & power supplies. Its compact size and high power density make it ideal for use in applications where space is limited.

CM100DU-12F-300G module is designed to be easy to use and integrate into existing systems, and its high switching frequency capability allows for efficient operation and reduced power losses.

CM100DU-12F-300G Features:
.Low Drive Power
.Low VCE(sat)
.Discrete Super-Fast Recovery Free-Wheel Diode
.Isolated Baseplate for Easy Heat Sinking
Applications:
.AC Motor Control
.UPS□ Battery Powered Supplies
 DualIGBTMOD™ Power Module.
DC Collector Current 100A
Collector Emitter Voltage Vces 600V
Power Dissipation Pd 350W
Collector Emitter Voltage V(br)ceo 600V
Transistor Case Style Module
No. of Pins 7
Operating Temperature Max 150°C
Operating Temperature Min -40 °C
SVHC To Be Advised
Module Transistor N Channel 100 A 600 V 350 W 600 V Module