Mitsubishi RM25TN-2H IGBT Module

the Mitsubishi RM25TN-2H IGBT Module. Here’s a summary of the key specifications:

1. Repetitive Peak Reverse Voltage (VRRM): 1600 V – This is the maximum reverse voltage the diodes can withstand in repetitive peak conditions.
2. Non-Repetitive Peak Reverse Voltage (VRSM): 1700 V – This is the maximum reverse voltage the diodes can withstand in non-repetitive peak conditions.
3. Recommended AC Input Voltage (EA): 440 V – This is the recommended input voltage for the AC lines that the diode bridge modules are intended to rectify.
4. DC Output Current (IO) at Tb = 100°C: 15 A – The maximum continuous DC current the diode bridge module can handle when its junction temperature is 100°C.
5. Surge (Non-Repetitive) Forward Current (IFSM) (One Half Cycle at 60Hz, Peak Value): 400 A – The maximum non-repetitive forward current the diode bridge module can handle during a surge, such as during power-on or transient conditions.
6. Junction Temperature (Tj): -40 ~ +125 °C – The allowable range for the diode junction temperature during operation.
7. Storage Temperature (Tstg): -40 ~ +125 °C – The allowable range for the diode bridge module’s storage temperature when it’s not in operation.
8. Operating Frequency (f): 1000 Hz – The intended operating frequency of the diode bridge module.
9. Maximum Mounting Torque (M3.5 Mounting Screw): 11 in-lb – The specified maximum torque for mounting screws used to secure the diode bridge module.
10. Maximum Mounting Torque (M3.5 Terminal Screw): 11 in-lb – The specified maximum torque for terminal screws used for connections.
11. Dielectric Strength (Viso) (AC 60Hz, 1 minute between terminal and base plate): 2500 V – The dielectric strength between the terminal and base plate when subjected to AC voltage.

These specifications provide important information for safely and effectively using the Mitsubishi RM25TN-2H IGBT Module in various applications. It’s crucial to adhere to these specifications to ensure the module’s proper functioning and longevity.