Infineon TDB6HK124N16RR New IGBT Module

#TDB6HK124N16RR Typical Applications

. Active Rectifier

. Half Controlled B6-bridge

Mechanical Features

. 2.5kV AC i min Insulation

. A1203 Substate with Low Thermal Resistance

. High Power Density

. High mechanical robustness

. Isolated Base Plate

. Compact design

. Copper Base Plate

. solder Contact Technology

. RoHS compliant

. Standard Housing

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Kollektor-Emitter-Sperrspannung Collector-emitter voltage Tvj = 25°C VCES 1200 V

Kollektor-Dauergleichstrom Continuous DC collector current TC = 80°C, Tvj max = 175°C IC nom 100 A

Periodischer Kollektor-Spitzenstrom Repetitive peak collector current tP = 1 ms ICRM 200 A

Gesamt-Verlustleistung Total power dissipation TC = 25°C, Tvj max = 175°C Ptot 515 W

Gate-Emitter-Spitzenspannung Gate-emitter peak voltage VGES:±20V

Temperatur in Schaltbetrieb Temperature under switching conditions Tvj op-40~150°C

Mounting Schraube M5 screw torque 3.0~6.0 N·m

Gewicht Weight 180g