Semikron SKM200GAR125D New IGBT Module

Features

.N channel.homogeneous Si

.Low inductance case

.Short tail current with low temperature dependence

.High short Circuit capability,self limiting to 6*Icnom

.Fast &soft inverse CAL diodes

.Isolated copper baseplate using DCB Direct Copper Bonding Technolohy

.Large clearance(13mm)and creepage distance(20mm)

Typical Applications*

.Switched mode power supplies an fsw>20kHz

.Resonant inverters up to 100kHz

.inductive heating

.Electronic welders at fsw>20kHz

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic:200A

Collector current Icp:300A

Collector power dissipation Pc:1270W

Collector-Emitter voltage VCES:4000V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 3.5  N·m

Weight 325g