Fuji 7MBP25RA120-59 New IGBT Module
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The 7MBP25RA120 is an IGBT-IPM (Insulated Gate Bipolar Transistor – Intelligent Power Module) from the R series. It offers several features for enhanced performance and reliability in power electronics applications.
Key Features:
Temperature Protection: The module features temperature protection by directly detecting the junction temperature of the IGBTs, which helps prevent overheating and potential damage.
Low Power Loss and Soft Switching: The design aims to minimize power losses and facilitate soft switching, improving overall efficiency.
Compatibility: The module is compatible with existing IPM-N series packages, making it suitable for replacements or upgrades.
High Performance and Reliability: It incorporates high-performance IGBTs with overheating protection, ensuring reliable operation in demanding conditions.
Simplified Design: The built-in control circuit reduces the number of parts, leading to improved reliability.
Maximum Ratings and Characteristics:
Collector-Emitter Voltage (Vces): 1200V
Gate-Emitter Voltage (VGES): ±20V
Collector Current (Ic): 25A (Continuous), 50A (Pulse)
Collector Power Dissipation (Pc): 198W
Collector-Emitter Voltage (VCES): 2500V
Operating Junction Temperature (Tj): Up to +150°C
Storage Temperature (Tstg): -40 to +125°C
Mounting Screw Torque: M5, 3.5 N·m
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