Infineon BSM25GD120DN2E New IGBT Module

Infineon #BSM25GD120DN2E  Power module

• 3-phase full-bridge

• Including fast free-wheel diodes

• Package with insulated metal base plate

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=25°C :35A

Collector current Icp 1ms Tc=25°C :70A

Collector power dissipation Pc:2080W

Isolation Voltage VIsol (AC 1 minute) :200V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

DIN humidity category, DIN 40 040 F sec

IEC climatic category, DIN IEC 68-1  40 / 125 / 56