Infineon FP35R12W2T4_B11 New IGBT Module

Posted Date：2023-09-10 16:22:13

Sell FP35R12W2T4_B11, #Infineon #FP35R12W2T4_B11 New Stock, FP35R12W2T4_B11 Insulated Gate Bipolar Transistor 35A I(C) 1200V V(BR)CES N-Channel MODULE-35;, #IGBT_Module, #IGBT, #FP35R12W2T4_B11

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FP35R12W2T4_B11

Features

· Low VCE(sat)

· Compact package

· P.C. board mount

· Converter diode bridge, Dynamic brake circuit

Applications

· Inverter for motor drive

· AC and DC servo drive amplifier

· Uninterruptible power supply

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic:35A

Collector current Icp:70A

Collector power dissipation Pc:215W

Collector-Emitter voltage VCES:1200V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mounting screw torque 3.5 *1 N·m

Insulated Gate Bipolar Transistor 35A I(C) 1200V V(BR)CES N-Channel MODULE-35

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category: Components