Infineon FF100R12KS4 New IGBT Module
Infineon FF100R12KS4 is power semiconductor module, it designed for use in industrial drives, wind turbines, and power supplies high power applications. It is dual IGBT (Insulated Gate Bipolar Transistor) module with voltage rating 1200V and current rating 100A per switch.
FF100R12KS4 features low switching losses, which makes it ideal for high-frequency switching applications. FF100R12KS4 has low on-state voltage drop, which reduces power dissipation and improves efficiency.
This module well designed for easy installation, FF100R12KS4 comes with integrated temperature sensors and protection features to ensure safe and reliable operation.
Product Category: IGBT Modules
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 3.2 V
Continuous Collector Current at 25 C: 150 A
Gate-Emitter Leakage Current: 400 nA
Pd – Power Dissipation: 780 W
Package / Case: 62 mm
Minimum Operating Temperature: – 40 C
Maximum Operating Temperature: + 125 C
Height: 30.5 mm
Length: 106.4 mm
Series: IGBT2 Fast
Width: 61.4 mm
Mounting Style: Chassis Mount
Maximum Gate Emitter Voltage: 20 V
100A/1200V/IGBT/2U FF100R12KS4 100A/1200V 62mm C-Series module with the fast IGBT for high frequency switching
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