Mitsubishi PM30CNA060 New IGBT Module
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Mitsubishi PM30CNA060 is a power module, which is a type of semiconductor device designed for power electronics applications. Specifically, this power module is a type of insulated gate bipolar transistor (IGBT) module, which combines both the high-speed switching capability of MOSFETs and the low on-state power losses of bipolar transistors.
PM30CNA060 module is rated for voltage 600V & maximum current 30A, widely use in motor control, power supplies, and inverters. It consists of six IGBTs in a half-bridge configuration, along with freewheeling diodes and a built-in temperature sensor to help ensure safe and reliable operation.
PM30CNA060 Description
IGBT Power Transistor Module, 30 Amp, 600 Volt.
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:600V
Gate-Emitter voltage VGES:±20V
Collector current Ic:30A
Collector current Icp:60A
Collector power dissipation Pc:83W
Isolation Voltage 60Hz, SinusoidalCharged part to Base, AC 1 min:2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5 *1 N·m
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