Toshiba MG200Q2YS50 New IGBT Module

#MG200Q2YS50 Description

Toshiba’s MG200Q2YS50 is the ultimate solution to enhance the performance of your high power switching applications.  this remarkable device can generate a power of 200 amperes of collector current and a collector emitter of 1200 volts. It is equipped with a complete half bridge, all in one package. Plus, its electrodes are isolated from its case and has low power dissipation, thus enhancing its efficiency rate.

Classified as a Generic Transient Recorder, MG200Q2YS50 can offer full support to various transient recorders. It has also been proven that this device can release the full potentials of DC motor controls.

MG200Q2YS50’s installation is very convenient due to its simple but advanced components. It has a built-in diode and a flange mounting device for easy use. Its amazing reverse recovery time has also been designed to improve its operational speed and reliability.

MG200Q2YS50  0.95 lbs Target_Applications MG200Q2YS50 could be used in HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS Features GTR Module Silicon N Channel IGBT

IGBT: 200A1200V