Toshiba MG75H2CL1 New IGBT Module
The Toshiba MG75H2CL1 is a high-frequency, high-power insulated gate bipolar transistor (IGBT) module designed for various power electronics applications. Here’s a summary of its features, applications, and specifications:
Low VCE(sat): The module exhibits a low on-state voltage drop.
Compact Package: It comes in a compact package.
P.C. Board Mount: Designed for easy mounting on printed circuit boards.
Converter Diode Bridge, Dynamic Brake Circuit: Suitable for use in converter diode bridges and dynamic brake circuits.
Built-in Temperature Sensor: Features a built-in temperature sensor for over-temperature protection.
Fault Detection Output Signal: Provides a fault detection output signal for fault diagnosis.
Inverter for Motor Drive: Used in motor control systems for variable-speed operation.
AC and DC Servo Drive Amplifier: Used to control servo motors in precision applications.
Uninterruptible Power Supply (UPS): Can be used to manage power supply during outages.
Absolute Maximum Ratings (Tc=25°C unless otherwise specified):
Collector-Emitter Voltage (Vces): 600V
Gate-Emitter Voltage (VGES): ±20V
Collector Current (Ic): 75A
Collector Current – Pulsed (Icp): 150A
Collector Power Dissipation (Pc): 350W
Maximum Collector-Emitter Voltage (VCES): 2500V
Operating Junction Temperature (Tj): +150°C
Storage Temperature (Tstg): -40 to +125°C
Mounting Screw Torque: 3.5 N·m
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