Mitsubishi FM50DY-10 New IGBT Module

Posted Date：2023-09-08 11:20:46

Sell FM50DY-10, #Mitsubishi #FM50DY-10 New Stock, FM50DY-10 Power Field-Effect Transistor, 50A I(D), 500V, 0.2ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, #IGBT_Module, #IGBT, #FM50DY_10

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Manufacturer Part Number: FM50DY-10

Manufacturer: Mitsubishi ELECTRIC CORP

Package Description: FLANGE MOUNT, R-PUFM-X7

Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

DS Breakdown Voltage-Min: 500 V

Drain Current-Max (ID): 50 A

Drain-source On Resistance-Max: 0.2 Ω

FET Technology: METAL-OXIDE SEMICONDUCTOR

JESD-30 Code: R-PUFM-X7

Number of Elements: 2

Number of Terminals: 7

Operating Mode: DEPLETION MODE

Package Body Material: PLASTIC/EPOXY

Package Shape: RECTANGULAR

Package Style: FLANGE MOUNT

Polarity/Channel Type: N-CHANNEL

Pulsed Drain Current-Max (IDM): 150 A

Surface Mount: NO

Terminal Form: UNSPECIFIED

Terminal Position: UPPER

Transistor Application: SWITCHING

Transistor Element Material: SILICON

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category: Components