Electronic Components News & Application
Infineon / Mitsubishi / Fuji / Semikron / IXYS / Eupec

Toshiba MG100J7CSAOA New IGBT Module

Posted Date:2023-09-08 01:58:46


MG100J7CSAOA

MG100J7CSAOA
MG100J7CSAOA
MG100J7CSAOA
MG100J7CSAOA
MG100J7CSAOA
MG100J7CSAOA

Sell MG100J7CSAOA, #Toshiba #MG100J7CSAOA New Stock, Toshiba gtr module silicon N channel IGBT 600V 100A, #IGBT_Module, #IGBT, #MG100J7CSAOA


Email: sales@shunlongwei.com

URL: https://www.slw-ele.com/mg100j7csaoa.html


The Toshiba MG100J7CSAOA module, which is a high-power switching device designed for motor control applications.

General Information:

The module contains 7 IGBTs (Insulated Gate Bipolar Transistors) integrated into a single package.

The module is an N-channel IGBT, which means it uses a negative voltage on the gate terminal to control current flow between the collector and emitter terminals.

The electrodes (terminals) of the module are isolated from the case, providing electrical isolation.

The module is designed for high-speed switching applications.

Electrical Characteristics:

Collector-Emitter Saturation Voltage (VCE(sat)): The maximum voltage drop across the collector and emitter terminals when the collector current (IC) is 100 A is 2.5 V or lower.

Fall Time (tf): The time required for the collector current to fall from the specified value to 10% of that value when the IC is 100 A is 0.5 µs or lower.

Reverse Recovery Time (trr): The time required for the reverse current to decay to 10% of its peak value when the forward current (IF) is 100 A is 0.3 µs or lower.

Maximum Ratings (at 25°C):

Collector-Emitter Voltage (Vces): The maximum voltage that can be applied between the collector and emitter terminals is 600 V.

Gate-Emitter Voltage (VGES): The maximum voltage that can be applied between the gate and emitter terminals is ±20 V.

Collector Current (DC, Ic): The maximum continuous collector current is 100 A.

Collector Current (1 ms): The maximum collector current that can be handled for a pulse duration of 1 ms is 200 A.

Collector Power Dissipation (TC = 25°C, PC): The maximum power dissipation that the module can handle while maintaining a case temperature of 25°C is 300 W.

Isolation Voltage (AC, Visol): The voltage that can be applied between the module’s case and the internal circuit without causing electrical breakdown is 2500 V for one minute.

Junction Temperature (Tj): The maximum allowable temperature of the junction is +150°C.

Storage Temperature Range (Tstg): The recommended range of temperatures for storing the module is from -40°C to +125°C.

Screw Torque: The recommended torque for screwing the module onto a surface is 3 to 3.5 N·m.

Please note that the weight of the module is specified as approximately 520 g (typical).



Article source: https://www.slw-ele.com/mg100j7csaoa.html


category: Components

Pre:Mitsuishi CM35MXB2-24A New IGBT Module

Next: Semikron SKKH 570/18 E New IGBT Module