Fuji 1MBI600NN-060 New IGBT Module

Features

• Square RBSOA

• Low Saturation Voltage

• Less Total Power Dissipation

• Improved FWD Characteristic

• Minimized Internal Stray Inductance

• Overcurrent Limiting Function (~3 Times Rated Current)

Applications

• High Power Switching

• A.C. Motor Controls

• D.C. Motor Controls

• Uninterruptible Power Supply

Absolute Maximum Ratings:

Collector-Emitter Voltage 600V

Gate -Emitter Voltage VGES ± 20 V

Max. Power Dissipation PC 2000 W

Operating Temperature Tj +150 °C

Storage Temperature Tstg -40 ~ +125 °C

Isolation Voltage A.C. 1min. Vis 2500 V

Zero Gate Voltage Collector Current ICES VGE=0V VCE=600V 4.0 mA

Gate-Emitter Leackage Current IGES VCE=0V VGE=± 20V 60 µA