Infineon FZ1200R33KF2C New IGBT Module

Manufacturer: Infineon

Product Category: IGBT Modules

Configuration: Triple Common Emitter Common Gate

Collector- Emitter Voltage VCEO Max: 3300 V

Collector-Emitter Saturation Voltage: 3.4 V

Continuous Collector Current at 25 C: 2000 A

Gate-Emitter Leakage Current: 400 nA

Pd – Power Dissipation: 14.5 kW

Package / Case: IS5a ( 62 mm )-9

Minimum Operating Temperature: – 40 C

Maximum Operating Temperature: + 125 C

Packaging: Tray

Height: 38 mm

Length: 190 mm

Width: 140 mm

Mounting Style: Screw Mount

Maximum Gate Emitter Voltage: +/- 20 V

IGBT Modules 3300V 1200A SINGLE