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Mitsubishi CM600YE2P-12F New IGBT Module

Posted Date:2023-09-05 18:58:15



Sell CM600YE2P-12F, #Mitsubishi #CM600YE2P-12F New Stock, Mitsubishi IGBT-Module 1200V 600A, #IGBT_Module, #IGBT, #CM600YE2P_12F

Email: sales@shunlongwei.com

URL: https://www.slw-ele.com/cm600ye2p-12f.html

The CM600YE2P-12F is a Mitsubishi IGBT (Insulated Gate Bipolar Transistor) module designed for various high-power applications. It contains a single IGBT in a single configuration along with a reverse-connected super-fast recovery free-wheel diode. This module is suitable for applications such as AC motor control, motion/servo control, UPS (Uninterruptible Power Supplies), and welding power supplies.

Absolute Maximum Ratings:

Junction Temperature (Tj): The module can operate in a temperature range from -40 to 150 ℃.

Storage Temperature (Tstg): It can be stored in temperatures ranging from -40 to 125 ℃.

Collector-Emitter Voltage (VCES): The maximum voltage across the collector and emitter is 1200 Volts.

Gate-Emitter Voltage (VGES): The maximum gate-emitter voltage is ±20 Volts.

Collector Current (IC): The maximum continuous collector current at a temperature of 25℃ is 600 Amperes.

Peak Collector Current (ICM): The maximum peak collector current at a junction temperature ≤ 150℃ is 1200 Amperes.

Emitter Current (IE): The maximum emitter current at a temperature of 25℃ is 600 Amperes.

Peak Emitter Current (IEM): The maximum peak emitter current is 1200 Amperes.

Maximum Collector Dissipation (Pc): The module can dissipate a maximum power of 4100 Watts at a temperature of 25℃.

Article source: https://www.slw-ele.com/cm600ye2p-12f.html

category: Components

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