Mitsubishi CM600YE2P-12F New IGBT Module
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The CM600YE2P-12F is a Mitsubishi IGBT (Insulated Gate Bipolar Transistor) module designed for various high-power applications. It contains a single IGBT in a single configuration along with a reverse-connected super-fast recovery free-wheel diode. This module is suitable for applications such as AC motor control, motion/servo control, UPS (Uninterruptible Power Supplies), and welding power supplies.
Absolute Maximum Ratings:
Junction Temperature (Tj): The module can operate in a temperature range from -40 to 150 ℃.
Storage Temperature (Tstg): It can be stored in temperatures ranging from -40 to 125 ℃.
Collector-Emitter Voltage (VCES): The maximum voltage across the collector and emitter is 1200 Volts.
Gate-Emitter Voltage (VGES): The maximum gate-emitter voltage is ±20 Volts.
Collector Current (IC): The maximum continuous collector current at a temperature of 25℃ is 600 Amperes.
Peak Collector Current (ICM): The maximum peak collector current at a junction temperature ≤ 150℃ is 1200 Amperes.
Emitter Current (IE): The maximum emitter current at a temperature of 25℃ is 600 Amperes.
Peak Emitter Current (IEM): The maximum peak emitter current is 1200 Amperes.
Maximum Collector Dissipation (Pc): The module can dissipate a maximum power of 4100 Watts at a temperature of 25℃.
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