Hitachi MBM200HS12A New IGBT Module

Hitachi MBM200HS12A is a power semiconductor module that combines high-power IGBT with a freewheeling diode. The MBM200HS12A designed for use in high-power motor drives, UPS systems, and power supplies.

MBM200HS12A features high blocking voltage 1200V & high current rating 200A. The module includes built-in temperature sensor & high-speed control interface for easy integration into control systems.

MBM200HS12A has low on-state voltage drop, which results in less power loss & higher efficiency. The freewheeling diode provides a path for the current to flow when the IGBT is turned off, preventing damage to the device & improving reliability.

The MBM200HS12A is a compact and robust module, with low profile of only 17mm and a weight of 180g. It has high isolation voltage of 2500Vrms and is capable of operating at high temperatures of up to 150°C.

Inorder to maintain switching losses tominimal improving Free wheeling diodes,(FWD) is essential and hitachi’s version of this is the Soft and Fast Recovery(SFD) Free Wheeling Diode.Basically, Improvements have been achieved in the following key requirements.

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:1200V

Gate-Emitter voltage VGES:±20V

Collector current Ic Continuous Tc=80°C :600A

Collector current Icp 1ms Tc=80°C :1200A

Isolation Voltage VIsol (AC 1 minute) :2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C