Infineon F4-100R12KS4 New IGBT Module
Maximum Ratings and Characteristics of the Device:
Absolute maximum ratings are specified at a temperature of 25°C unless mentioned otherwise.
Collector-Emitter Voltage (VCES) is rated at 1200 V with a junction temperature of 25°C.
The Continuous DC Collector Current (IC nom) is 100 A at a case temperature of 100°C and a maximum junction temperature of 175°C.
The Repetitive Peak Collector Current (ICRM) is 200 A for a pulse duration (tP) of 1 ms.
Total Power Dissipation (Ptot) is rated at 660 W with a case temperature of 25°C and a maximum junction temperature of 175°C.
The Gate-Emitter Peak Voltage (VGES) is ±20V.
The temperature range under switching conditions (Tvj op) is -40°C to 150°C.
For mounting, a torque of 3.0~6.0 N·m should be applied to the M5 screw.
The weight of the device is 300g.
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