Fuji 2MBI100N-060 New IGBT Module
Fuji 2MBI100N-060 is a high power insulated-gate bipolar transistor (IGBT) module designed for use in power electronics applications.
The 2MBI100N-060 module features voltage rating 600 volts & current rating 100 amps, suitable for use in high-power applications such as motor drives, power supplies, and welding equipment.
2MBI100N-060 has compact & rugged design that allows for easy installation and reliable operation in harsh environments.
Fuji 2MBI100N-060 IGBT module features built-in over-current protection and over-temperature protection, which help to ensure safe and stable operation.
• Square RBSOA
• Low Saturation Voltage
• Less Total Power Dissipation
• Improved FWD Characteristic
• Minimized Internal Stray Inductance
• Overcurrent Limiting Function (~3 Times Rated Current)
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:600V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=80°C :100A
Collector current Icp 1ms Tc=80°C :200A
Collector power dissipation Pc:400W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5 *1 N·m
Reverse Recovery Time trr IF=100A 300 ns
Diode Forward On-Voltage VF IF=100A VGE=0V 3.0 V
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