Electronic Components News & Application
Infineon / Mitsubishi / Fuji / Semikron / IXYS / Eupec

IXYS MUBW35-12A7 New IGBT Module

Posted Date:2023-09-03 19:18:39



Sell MUBW35-12A7, #IXYS #MUBW35-12A7 New Stock, MUBW35-12A7 Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-24;, #IGBT_Module, #IGBT, #MUBW35_12A7

Email: sales@shunlongwei.com

URL: https://www.slw-ele.com/mubw35-12a7.html

IXYS MUBW35-12A7 is a power diode module designed for use in various industrial applications such as welding & battery charging.

Electrical Specifications:

Maximum Average Forward Current: 35 A

Repetitive Peak Reverse Voltage: 1200 V

Maximum Surge Current: 500 A

Maximum Forward Voltage Drop: 1.85 V at 35 A

Maximum Reverse Recovery Time: 200 ns

Maximum Reverse Recovery Current: 30 A

Mechanical Specifications:

Weight: 130 g

Module Type: Standard Diode

Package Style: MiniBLOC

Mounting Style: Screw

Mounting Torque: 3.5 Nm

Operating Temperature: -40 to +125 °C

This MUBW35-12A7 IGBT module designed with high power density, low profile, & high surge current capability. Its MiniBLOC package style easy to install and replace, while its screw mounting style ensures secure and reliable mounting.

Article source: https://www.slw-ele.com/mubw35-12a7.html

category: Components

Pre:Vinco P546A2005 New IGBT Module

Next: Sharp LM64P11 New LCD Display