Mitsubishi QM75D1X-H New IGBT Module

QM75D1X-H Features

• N Channel, enhancement mode

• Short internal connections avoid oscillations

• Without hard mould (environmental aspects)

• Isolated copper baseplate using DCB Direct Copper Bonding Ceramic

• All electrical connections on top for easy busbaring

Typical Applications

• Switched mode power supplies

• DC servo and robot drives

• DC choppers

• Resonant and welding inverters

• AC motor drives

• Laser power supplies

• UPS equipment

• Not suitable for linear amplification

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

Collector-Emitter voltage Vces:600V

Gate-Emitter voltage VGES:±20V

Collector current Ic:75A

Collector current Icp:200A

Collector power dissipation Pc:180W

Collector-Emitter voltage VCES:2500V

Operating junction temperature Tj:+150°C

Storage temperature Tstg :-40 to +125°C

Mitsubishi IGBT QM75D1X-H 75A/600V/GTR/2U