Mitsubishi CM450DX-24S1 New IGBT Module

Mitsubishi Electric Features

HIGH POWER SWITCHING USE INSULATED TYPE

Collector current IC ………….……………………..… 4 5 0 A

Collector-emitter voltage VCES ………………….… 1 2 0 0 V

Maximum junction temperature Tj m a x ………….. 1 7 5 °C

Flat base Type

Copper base plate (non-plating)

Tin plating pin terminals

RoHS Directive compliant MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified)

VCES Collector-emitter voltage G-E short-circuited 1200 V

VGES Gate-emitter voltage C-E short-circuited ± 20 V

IC Collector current DC, TC=107 °C (Note2, 4) 450 A

ICRM Collector current Pulse, Repetitive (Note3) 900 A

Pt ot Total power dissipation TC=25 °C (Note2, 4) 2775 W

Vi s o l Isolation voltage Terminals to base plate, RMS, f=60 Hz, AC 1 min 4000 V

Tj m a x Maximum junction temperature Instantaneous event (overload) 175 °C

T C m a x Maximum case temperature (Note4) 125 °C

Tj o p Operating junction temperature Continuous operation (under switching) -40 ~ +150 °C

Ts t g Storage temperature – -40 ~ +125 °C

Ms Mounting torque Mounting to heat sink M 5 screw 2.5~3.5 N·m