Infineon FF400R07KE4 New IGBT Module

the FF400R07KE4 an IGBT (Insulated Gate Bipolar Transistor) module. These ratings define the limits beyond which the device’s operation may become unreliable or even permanently damaged. Here’s a breakdown of the values:

Collector-Emitter Voltage (VCES): 650 Volts

The maximum voltage that can be applied between the collector and emitter terminals with the gate disconnected (VGE = 0V).

Gate-Emitter Voltage (VGES): ±20 Volts

The maximum voltage that can be applied between the gate and emitter terminals with the collector disconnected (VCE = 0V). It’s important to note that this device is likely designed for use with positive and negative gate voltages.

Collector Current (DC, TC = 125°C) (IC): 400 Amperes

The maximum continuous collector current that the device can handle when the case temperature is at 125°C.

Collector Current (Pulse, Repetitive) (ICRM): 800 Amperes

The maximum repetitive pulse collector current that the device can handle.

Total Power Dissipation (TC = 25°C) (Ptot): 1250 Watts

The maximum power that the device can dissipate without exceeding its temperature limits when the case temperature is at 25°C.

Isolation Voltage (Visol): 2500 Volts

The isolation voltage between the device terminals and the baseplate. This is the maximum allowable voltage difference between these two sets of terminals.

Maximum Junction Temperature (Tj(max)): 175 °C

The maximum temperature that the device’s internal junction can reach during operation. Exceeding this temperature can lead to device degradation.

Maximum Case Temperature (TC(max)): 125 °C

The maximum allowable temperature of the device’s case during operation.

Operating Junction Temperature (Tj(op)): -40 to +150 °C

The recommended range of operating temperatures for the device’s internal junction.

Storage Temperature (Tstg): -40 to +125 °C

The recommended range of storage temperatures for the device when it’s not in operation.