National Instruments PHT250N16 IGBT Module
PHT250N16 IGBT (Insulated Gate Bipolar Transistor) module. These specifications outline the maximum ratings and characteristics of the IGBT module under different operating conditions. Here’s a breakdown of the information you’ve provided:
- Repetitive Peak Off-State Voltage (VDRM): 1600V – This is the maximum voltage the IGBT can withstand when it’s turned off and in a repetitive mode.
- Non-Repetitive Peak Reverse Voltage (VRSM): 1700V – This is the maximum reverse voltage the IGBT can handle in a non-repetitive mode.
- Average On-State Current (Io(AV)): 250A – This is the maximum average current the IGBT can handle when it’s turned on and conducting.
- Surge On-State Current (ITSM): 4000A – This is the maximum non-repetitive surge current the IGBT can handle for a single pulse.
- Peak Gate Power (PGM): 5W – This is the maximum power that the gate of the IGBT can handle during peak operation.
- Peak Gate Current (IGM): 2A – This is the maximum current that can flow into the gate of the IGBT during peak operation.
- Peak Gate Voltage (VGM): 10V – This is the maximum voltage that can be applied to the gate of the IGBT.
- Operating Junction Temperature Range (Tjw): -40 ~ +125°C – This is the temperature range within which the IGBT can safely operate. Below -40°C and above +125°C, the device might not perform as intended or could be damaged.
- Storage Temperature (Tstg): -40 ~ +125°C – This is the temperature range within which the IGBT can be stored without causing any permanent damage.
- Isolation Voltage (Viso): 2500V AC for 1 minute – This is the voltage that the isolation between the terminal and the base can withstand for one minute without breaking down.
- Mounting Torque: Terminal M5 2.4~2.8 N.m – This is the recommended range of torque to apply when mounting the IGBT module with a terminal size M5.