Infineon BSM50GD120DN2E3226 New IGBT Module

Introducing the Infineon BSM50GD120DN2E3226 Silicon Modules, a product category offered by Infineon, a renowned manufacturer. These modules are designed with hex configuration, providing excellent performance for various applications. Here are some key specifications of the product:

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Infineon BSM50GD120DN2E3226 New IGBT Module
Infineon BSM50GD120DN2E3226 New IGBT Module
Infineon BSM50GD120DN2E3226 New IGBT Module
  • Manufacturer: Infineon
  • Product Category: IGBT Modules
  • Collector-Emitter voltage (VCEO) Max: 1200V
  • Collector-Emitter Saturation voltage: 2.5V
  • Continuous Collector Current at 25°C: 50A
  • Gate-Emitter Leakage Current: 200nA
  • Power Dissipation (Pd): 350W
  • Package/Case: EconoPACK 2
  • Maximum Operating Temperature: +150°C
  • Packaging: Tray
  • Height: 17mm
  • Length: 107.5mm
  • Technology: Si (Silicon)
  • Width: 45.5mm
  • Mounting Style: Chassis Mount
  • Maximum Gate Emitter Voltage: 20V

These N-CH (N-channel) IGBT modules are suitable for a wide range of applications that require high power and efficient switching capabilities.