Mitsubishi PM100RSE120 New IGBT module

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The Mitsubishi PM100RSE120 is a high-performance IGBT module featuring several advanced features and characteristics.

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Mitsubishi PM100RSE120 New IGBT module

Here are the key features of the PM100RSE120 module:

  1. Fourth-Generation Planar IGBT Chip: The module utilizes a new 4th generation planar IGBT chip, manufactured using a fine 1μm rule process. This technology enhances the performance and efficiency of the module.
  2. Soft Reverse-Recovery Diode: The module incorporates a new diode designed to achieve soft reverse-recovery characteristics. This diode ensures smooth switching transitions and minimizes voltage spikes during operation.
  3. Current-Sense IGBT: It is a Three-Phase 100A, 1200V current-sense IGBT module specifically designed for 15kHz switching applications. This makes it suitable for various power electronics applications such as motor control and power supplies.
  4. Current-Sense Regenerative Brake IGBT: The module also includes a 50A, 1200V current-sense IGBT specifically designed for regenerative brake applications. This feature allows for efficient energy recovery in braking systems.
  5. Monolithic Gate Drive & Protection Logic: The PM100RSE120 integrates a monolithic gate drive circuitry along with protection logic. This design simplifies the module’s installation and wiring while providing essential protection functions for over-current, short-circuit, over-temperature, and under-voltage conditions.
  6. Detection, Protection & Status Indication Circuits: The module features circuits for detecting and protecting against over-current, short-circuit, over-temperature, and under-voltage conditions. Additionally, it provides status indication to facilitate monitoring and diagnostics.
  7. Low Acoustic Noise: The module is designed to operate silently, making it suitable for 18.5/22kW class inverter applications where low noise is desired.
Mitsubishi PM100RSE120 New IGBT module

Here are the maximum ratings and characteristics of the PM100RSE120 module:

  • Collector-Emitter Voltage (Vces): 1200V
  • Gate-Emitter Voltage (VGES): ±20V
  • Collector Current (IC): 100A
  • Collector Current (Icp): 200A
  • Collector Power Dissipation (Pc): 595W
  • Collector-Emitter Voltage (VCES): 2500V
  • Operating Junction Temperature (Tj): +150°C
  • Storage Temperature (Tstg): -40 to +125°C
  • Mounting Screw Torque: 3.5 * 1 N·m

These specifications highlight the module’s voltage, current, power dissipation, and temperature limits for safe and reliable operation.

Mitsubishi PM100RSE120 New IGBT module