Fuji NEW IGBT 7MBR25SA120-50 in-stock

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The 7MBR25SA120-50 is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by Fuji Electric. It is designed for high-power applications that require efficient switching and high voltage capability. Here are some key features and specifications of the 7MBR25SA120-50:

Fuji NEW IGBT 7MBR25SA120-50 in-stock

Power Rating: The 7MBR25SA120-50 is rated for a maximum collector current (IC) of 25A, making it suitable for medium to high-power applications.

voltage Rating: It has a maximum collector-emitter voltage (VCE) rating of 1200V, allowing it to handle high voltage levels.

IGBT Technology: The module utilizes advanced IGBT technology, which combines the advantages of both mosfet and bipolar junction Transistor (BJT) to achieve high switching speeds and low conduction losses.

Fuji NEW IGBT 7MBR25SA120-50 in-stock

Low Saturation Voltage: The 7MBR25SA120-50 exhibits low saturation voltage, resulting in reduced power losses during conduction.

High Switching Frequency: It is designed to operate at high switching frequencies, enabling efficient and rapid switching of the IGBTs.

Fuji NEW IGBT 7MBR25SA120-50 in-stock

Package Type: The 7MBR25SA120-50 is packaged in a module format, which includes the IGBT chips, gate drive circuitry, and other necessary components. This package provides ease of installation and thermal management.

Applications: This IGBT module is commonly used in various industrial applications such as motor drives, power converters, uninterruptible power supplies (UPS), renewable energy systems, and other high-power electronic systems.

The 7MBR25SA120-50 offers a combination of high power handling capability, efficient switching performance, and reliable protection features. It is well-suited for applications that require high voltage and high current switching with optimal power efficiency.