Infineon FZ1600R12KF4_S1 New Stock
FZ1600R12KF4_S1 Video
Sell FZ1600R12KF4_S1, #Infineon #FZ1600R12KF4_S1 New Stock, 62mm C-series module with the fast IGBT2 for high-frequency switching 1200V 600A, #IGBT_Module, #IGBT, #FZ1600R12KF4_S1
Email: sales@shunlongwei.com
Infineon FZ1600R12KF4_S1 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module designed for power electronic applications. FZ1600R12KF4_S1 consists of two IGBTs in a half-bridge configuration and comes with a fast and soft freewheeling diode.
The FZ1600R12KF4_S1 module has voltage rating 1200V & current rating 1600A, suitable motor drives, renewable energy systems, and industrial inverters.
One of the key features of FZ1600R12KF4_S1 is its low-loss design, which results in higher efficiency and lower thermal stress.
Infineon Infineon FZ1600R12KF4_S IGBT:
Maximum Rated Values
Collector-emitter voltage Tvj = 25°C VCES 1200 V
Continuous DC collectorcurrent TC = 60°C, Tvj max = 150°C IC nom IC 600A
Repetitive peak collector current tp = 1 ms ICRM 1200 A
Total power dissipation TC = 25°C, Tvj max = 150 Ptot 3900 W
Gate-emitter peak voltage VGES +/-20 V
Temperature under switching conditions Tvj op -40 125 °C
Storage temperature Tstg -40 125 °C
Gewicht Weight G 340 g