Micron to install EUV in Hiroshima fab
It will be the first use of EUV tools in Japan and will enable the Hiroshima to make Micron’s latest generation DRAMs which it calls its 1-gamma node which will be ramped starting in 2025..
“Micron’s Hiroshima operations have been central to the development and production of several industry-leading technologies for memory over the past decade,” Micron President and CEO Sanjay Mehrotra (pictured) said. “We are proud to be the first to use EUV in Japan and to be developing and manufacturing 1-gamma at our Hiroshima fab. Our plans reflect our continued commitment to Japan, strong relationship with the Japanese government and the exceptional talent of our Micron Hiroshima team.”
“Today’s announcement between Micron and Japan to produce 1-gamma memory in Hiroshima is a major step forward to secure Semiconductor supply chains,” said Rahm Emanuel, United States Ambassador to Japan. “This partnership demonstrates how allies, when working together, can create economic opportunity and security in cutting-edge technologies.”
“Micron is the only company that manufactures DRAM in Japan and is critical to setting the pace for not only the global DRAM industry but our developing semiconductor ecosystem,” said Satoshi Nohara, METI Director-General of the Commerce and Information Policy Bureau. “We are pleased to see our collaboration with Micron take root in Hiroshima with state-of-the-art EUV to be introduced on Japanese soil. This will not only deepen and advance the talent and infrastructure of our semiconductor ecosystem, it will also unlock exponential growth and opportunity for our digital economy.”
With more than 4,000 engineers and technicians in Japan, Micron is committed to advancing workforce development and the semiconductor ecosystem in Japan and, over the past five years, has hired more than 1,500 new employees in Japan.
Micron supplies approximately one-third of the DRAM Japan uses.
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