SiC modules target automotive and industry energy applications

Navitas Semiconductor has extended its portfolio into higher power markets with its leading-edge SiC power products in SiCPAK modules and bare die.

Target applications cover centralised and string solar inverters, ESS, industrial motion, DC-DC converters, EV onboard chargers, EV roadside fast chargers, UPS, bi-directional microgrids, wind energy, and solid-state circuit breakers.

Ranging from 650V to 6,500V, the company offers a wide variety of SiC technology. From its original line-up of discrete packages – from 8mm x 8mm surface-mount QFNs to through-hole TO-247s – the GeneSiC SiCPAK is the first direct entry point into higher-power applications. A complete power-module roadmap, with high-voltage SiC mosfets and MPS diodes, GaN power ICs, high-speed digital isolators and low-voltage silicon control ICs, is being mapped out.

Dr Ranbir Singh, Navitas EVP for SiC, noted: “With a complete portfolio of leading-edge power, control and isolation technology, Navitas will enable customers to accelerate the transition from fossil fuels and legacy silicon power products to new, renewable energy sources and next-generation semiconductors, with more powerful, more efficient, faster-charging systems.”

SiCPAK modules utilise ‘press-fit’ technology to deliver compact form factors for power circuits and provide cost-effective, power-dense solutions to end users. The modules are constructed upon GeneSiC die that has already made a mark regarding superior performance, reliability, and ruggedness. Examples include a SiCPAK half-bridge module, rated at 6mOhm, 1,200V, with industry-leading trench-assisted planar-gate SiC mosfet technology. Multiple configurations of SiC MOSFETs and MPS diodes will be provided to create application-specific modules for superior system performance. The initial release will include 1,200V-rated half-bridge modules in 6, 12, 20, and 30mOhm ratings.

Within the lead-free SiCPAK, every SiC chip is silver sintered to the module’s substrate for exceptional cooling and reliability. The substrate is ‘direct-bonded copper’ and is manufactured using an active-metal brazing technique on Si3N4 ceramics, which is excellent for power-cycling applications. This construction provides superior strength, flexibility, fracture resistance, and good thermal conductivity for a cool, reliable, long-life operation.

For customers who choose to do their own high-power modules, all GeneSiC MOSFET and MPS diodes are obtainable in bare die format, with gold and aluminium top-side metallisations.

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