Infineon BSM50GB120DN2 New Stock
BSM50GB120DN2 Video
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Infineon BSM50GB120DN2 is a high-power IGBT (Insulated Gate Bipolar Transistor) module designed for industrial applications. BSM50GB120DN2 has a rated voltage 1200V & rated current 75A, which makes it suitable for use in high voltage and high current circuits.
The BSM50GB120DN2 consists of two IGBT chips in a half-bridge configuration with built-in driver circuitry, which simplifies the design of power electronics systems. The BSM50GB120DN2 module also features low power losses and high switching frequency capabilities, widely use in motor drives, renewable energy systems, and welding equipment.
The BSM50GB120DN2 is designed with a low-inductive construction, which reduces electromagnetic interference and ensures reliable and stable operation.
BSM50GB120DN2 Specification:
Manufacturer: Infineon
Product Category: IGBT Modules
RoHS: YES
Brand: Infineon Technologies
Product: IGBT Silicon Modules
Configuration: Half Bridge
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.5 V
Continuous Collector Current at 25 C: 78 A
Gate-Emitter Leakage Current: 200 nA
Pd – Power Dissipation: 400 W
Package / Case: Half Bridge1
Maximum Operating Temperature: + 150 C
Packaging: Bulk
Maximum Gate Emitter Voltage: 20 V
Minimum Operating Temperature: – 40 C
Mounting Style: Screw
Factory Pack Quantity: 10