Global distribution agreement for next-generation GaN power ICs and SiC technology
Mouser has agreed on a global distribution deal with Navitas Semiconductor. According to the agreement, Mouser will provide customers with the company’s range of GaNFast and GaNSense power ICs and the GeneSiC range of SiC power mosfets and diodes. These highly-efficient semiconductors provide high-frequency performance for applications, including consumer electronics, EVs, fast charging devices, alternative energy and industrial solutions.
“Mouser is pleased to add this strong industry leader to our line card and to deliver these innovative power devices to our customers,” said Kristin Schuetter, Mouser’s vice president of Supplier Management. “Design engineers now have easy access to Navitas’ advanced components, backed by Mouser’s unsurpassed customer service and best-in-class logistics. We’re looking forward to a very successful partnership.”
“Adding GaNFast parts to the existing GeneSiC portfolio greatly amplifies the awareness, interest and ultimately revenue for Navitas via Mouser’s established and successful distribution platform,” said David Carroll, senior vice president Worldwide Sales at Navitas Semiconductor. “Next-gen products, ease-of-use, immediate availability and great tech support mean that power designers can quickly deliver high-quality prototypes with both SiC and GaN, on time and ready for mass production.”
The GaNFast Power ICs provide switching frequencies six times higher than discrete GaN solutions, increasing energy savings and reducing system size and weight. GaNFast power ICs are easily used and compatible with popular topologies and controllers. GaNFast power ICs monolithically integrate GaN power, drive, and control to deliver an easy-to-use, high-speed, high-performance ‘digital-in, power-out building block. GaNFast power ICs provide up to 3x faster charging in half the size and weight of old, silicon-based power electronics or 3x more power with no size or weight increase.
The family of power ICs provides multiple efficiency and reliability benefits in simple-to-use, low-profile, low-inductance, industry-standard PQFN packages. These devices allow fast time-to-prototype and fast time-to-revenue and are created to enable the next generation of soft-switching topologies while maximising GaN’s high-speed MHz+ fast-switching capability. These high-efficiency devices are ideal for mobile and data centre applications and industrial motor drives.
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