Fuji 1MBI600NP-060 New Stock

Fuji 1MBI600NP-060 New Stock
Fuji 1MBI600NP-060 New Stock
Fuji 1MBI600NP-060 New Stock
Fuji 1MBI600NP-060 New Stock
Fuji 1MBI600NP-060 New Stock
Fuji 1MBI600NP-060 New Stock

1MBI600NP-060 Video

Sell 1MBI600NP-060, #Fuji #1MBI600NP-060 New Stock, 1MBI600NP-060 Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel, M128, 4 PIN, #IGBT_Module, #IGBT, #1MBI600NP_060


Email: sales@shunlongwei.com


Features
· High speed switching
· Voltage drive
· Low inductance module structure
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:600V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=80°C :600A
Collector current Icp 1ms Tc=80°C :1200A
Collector power dissipation Pc:2000W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5 *1 N·m