Infineon IFS150B12N3T4_B31 New Stock
IFS150B12N3T4_B31 Video
Sell IFS150B12N3T4_B31, #Infineon #IFS150B12N3T4_B31 New Stock, Technische Information IGBT Module VCES 1200V 150A, #IGBT_Module, #IGBT, #IFS150B12N3T4_B31
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Infineon #IFS150B12N3T4_B31 Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Kollektor-Emitter-Sperrspannung Collector-emitter voltage Tvj = 25°C VCES 1200 V
Kollektor-Dauergleichstrom Continuous DC collector current TC = 100°C, Tvj max = 175°C IC nom 150 A
Periodischer Kollektor-Spitzenstrom Repetitive peak collector current tP = 1 ms ICRM 300 A
Gesamt-Verlustleistung Total power dissipation TC = 25°C, Tvj max = 175°C Ptot750 W
Gate-Emitter-Spitzenspannung Gate-emitter peak voltage VGES:±20V
Temperatur in Schaltbetrieb Temperature under switching conditions Tvj op-40~150°C
Gewicht Weight 300g
.Absolute maximum ratings (Tc=25°C unless without specified)
Kollektor-Emitter-Sperrspannung Collector-emitter voltage Tvj = 25°C VCES 1200 V
Kollektor-Dauergleichstrom Continuous DC collector current TC = 100°C, Tvj max = 175°C IC nom 150 A
Periodischer Kollektor-Spitzenstrom Repetitive peak collector current tP = 1 ms ICRM 300 A
Gesamt-Verlustleistung Total power dissipation TC = 25°C, Tvj max = 175°C Ptot750 W
Gate-Emitter-Spitzenspannung Gate-emitter peak voltage VGES:±20V
Temperatur in Schaltbetrieb Temperature under switching conditions Tvj op-40~150°C
Gewicht Weight 300g