Infineon F4-100R12KS4 New Stock
F4-100R12KS4 Video
Sell F4-100R12KS4, #Infineon #F4-100R12KS4 New Stock, Insulated Gate Bipolar Transistor, 130A I(C), 1200V V(BR)CES, N-Channel, MODULE-26, #IGBT_Module, #IGBT, #F4_100R12KS4
Email: sales@shunlongwei.com
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Kollektor-Emitter-Sperrspannung Collector-emitter voltage Tvj = 25°C VCES 1200 V
Kollektor-Dauergleichstrom Continuous DC collector current TC = 100°C, Tvj max = 175°C IC nom 100 A
Periodischer Kollektor-Spitzenstrom Repetitive peak collector current tP = 1 ms ICRM 200 A
Gesamt-Verlustleistung Total power dissipation TC = 25°C, Tvj max = 175°C Ptot 660 W
Gate-Emitter-Spitzenspannung Gate-emitter peak voltage VGES:±20V
Temperatur in Schaltbetrieb Temperature under switching conditions Tvj op-40~150°C
Mounting M5 screw torque 3.0~6.0 N·m
Gewicht Weight 300g
.Absolute maximum ratings (Tc=25°C unless without specified)
Kollektor-Emitter-Sperrspannung Collector-emitter voltage Tvj = 25°C VCES 1200 V
Kollektor-Dauergleichstrom Continuous DC collector current TC = 100°C, Tvj max = 175°C IC nom 100 A
Periodischer Kollektor-Spitzenstrom Repetitive peak collector current tP = 1 ms ICRM 200 A
Gesamt-Verlustleistung Total power dissipation TC = 25°C, Tvj max = 175°C Ptot 660 W
Gate-Emitter-Spitzenspannung Gate-emitter peak voltage VGES:±20V
Temperatur in Schaltbetrieb Temperature under switching conditions Tvj op-40~150°C
Mounting M5 screw torque 3.0~6.0 N·m
Gewicht Weight 300g